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Viser: Random Telegraph Signals

Random Telegraph Signals in Semiconductor Devices, 1. udgave
Søgbar e-bog

Random Telegraph Signals in Semiconductor Devices Vital Source e-bog

Eddy Simoen og Cor Claeys
(2016)
NBN International
1.358,00 kr.
Leveres umiddelbart efter køb
Random Telegraph Signals in Semiconductor Devices, 1. udgave
Søgbar e-bog

Random Telegraph Signals in Semiconductor Devices Vital Source e-bog

Eddy Simoen og Cor Claeys
(2016)
NBN International
1.358,00 kr.
Leveres umiddelbart efter køb
Random Telegraph Signals

Random Telegraph Signals

Claeys Simoen
(2016)
Sprog: Engelsk
Institute of Physics Publishing
1.378,00 kr.
ikke på lager, Bestil nu og få den leveret
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Detaljer om varen

  • 1. Udgave
  • Vital Source searchable e-book (Reflowable pages)
  • Udgiver: NBN International (November 2016)
  • Forfattere: Eddy Simoen og Cor Claeys
  • ISBN: 1739780750312721
Following their first observation in 1984, random telegraph signals (RTS) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTS have become an issue of major concern to the semiconductor industry, both in the development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices.
It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single-trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTS to applied technology.
Licens varighed:
Bookshelf online: 5 år fra købsdato.
Bookshelf appen: ubegrænset dage fra købsdato.

Udgiveren oplyser at følgende begrænsninger er gældende for dette produkt:
Print: 2 sider kan printes ad gangen
Copy: højest 2 sider i alt kan kopieres (copy/paste)

Detaljer om varen

  • 1. Udgave
  • Vital Source searchable e-book (Reflowable pages)
  • Udgiver: NBN International (November 2016)
  • Forfattere: Eddy Simoen og Cor Claeys
  • ISBN: 1730750312721
Following their first observation in 1984, random telegraph signals (RTS) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTS have become an issue of major concern to the semiconductor industry, both in the development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single-trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTS to applied technology.
Licens varighed:
Bookshelf online: 5 år fra købsdato.
Bookshelf appen: ubegrænset dage fra købsdato.

Udgiveren oplyser at følgende begrænsninger er gældende for dette produkt:
Print: 2 sider kan printes ad gangen
Copy: højest 2 sider i alt kan kopieres (copy/paste)

Detaljer om varen

  • Hardback: 242 sider
  • Udgiver: Institute of Physics Publishing (December 2016)
  • ISBN: 9780750312738

Following their first observation in small area silicon MOSFETs in 1984, random telegraph signals (RTS) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. However, as devices move to the nanometer scale, particularly memory devices and logic circuits, and in the development of alternatives to silicon MOSFETS, RTS have become an issue of major concern to the semiconductor industry. Moreover, following the move to the nanoscale, the devices will become more susceptible to single-trap random telegraph signal effects. It is clear that the successors to planar silicon transistors, including nanowire devices, tunnel field effect transistors, and carbon nanotubes are equally sensitive or even more so than current CMOS devices.

It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomema, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTS to applied technology.

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