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Viser: Heteroepitaxy of Semiconductors - Theory, Growth, and Characterization, Second Edition
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Heteroepitaxy of Semiconductors Vital Source e-bog
John E. Ayers
(2016)
CRC Press
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Heteroepitaxy of Semiconductors
Theory, Growth, and Characterization, Second Edition
John E. Ayers, Tedi Kujofsa, Paul Rago og Johanna Raphael
(2016)
Sprog: Engelsk
Taylor & Francis Group
3.199,00 kr.
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Detaljer om varen
- 2. Udgave
- Vital Source searchable e-book (Fixed pages)
- Udgiver: CRC Press (Oktober 2016)
- ISBN: 9781482254365
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
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Detaljer om varen
- 2. Udgave
- Hardback: 643 sider
- Udgiver: Taylor & Francis Group (Oktober 2016)
- Forfattere: John E. Ayers, Tedi Kujofsa, Paul Rago og Johanna Raphael
- ISBN: 9781482254358
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
Preface to the Second Edition..................................................................................................... xiii Preface to the First Edition............................................................................................................xv
1. Introduction
..............................................................................................................................1 References..................................................................................................................................4
2. Properties of Semiconductors
...............................................................................................7
2.1 Introduction....................................................................................................................7
2.2 Crystallographic Properties.........................................................................................7
2.2.1 Diamond Structure......................................................................................... 12
2.2.2 Zinc Blende Structure..................................................................................... 12
2.2.3 Wurtzite Structure.......................................................................................... 13
2.2.4 Silicon Carbide................................................................................................ 14
2.2.5 Miller Indices in Cubic Crystals................................................................... 15
2.2.6 Miller-Bravais Indices in Hexagonal Crystals........................................... 16
2.2.7 Computations and the Metric Tensor.......................................................... 17
2.2.7.1 Coordinate Transformation........................................................... 18
2.2.7.2 The Metric Tensor...........................................................................20
2.2.7.3 Distances between Lattice Points and Lengths of Vectors........ 21
2.2.7.4 Angle between Vector Directions.................................................23
2.2.7.5 Volume of a Unit Cell...................................................................... 24
2.2.7.6 Reciprocal Basis Vectors and Reciprocal Metric Tensor............ 24
2.2.7.7 Distances and Angles Involving Planes......................................26
2.2.8 Orientation Effects..........................................................................................29
2.2.8.1 Diamond Semiconductors..............................................................29
2.2.8.2 Zinc Blende Semiconductors.........................................................29
2.2.8.3 Wurtzite Semiconductors...............................................................30
2.2.8.4 Hexagonal Silicon Carbide............................................................. 32
2.3 Lattice Constants and Thermal Expansion Coefficients........................................ 32
2.4 Elastic Properties.......................................................................................................... 37
2.4.1 Infinitesimal Strain Theory........................................................................... 37
2.4.2 Hooke''s Law.................................................................................................... 41
2.4.2.1 Hooke''s Law for Isotropic Materials............................................43
2.4.2.2 Hooke''s Law for Cubic Crystals....................................................43
2.4.2.3 Hooke''s Law for Hexagonal Crystals...........................................46
2.4.3 Elastic Moduli..................................................................................................46
2.4.3.1 Elastic Moduli for Cubic Crystals.................................................48
2.4.3.2 Elastic Moduli for Hexagonal Crystals........................................49
2.4.4 Biaxial Stresses and Tetragonal Distortion in Cubic Crystals..................50
2.4.5 Biaxial Stresses in Hexagonal Crystals........................................................ 52
2.4.6 Strain Energy in Cubic Crystals................................................................... 52
2.4.7 Strain Energy in Nitride Semiconductors...................................................53
2.5 Surface Free Energy.....................................................................................................53
2.6 Dislocations................................................................................................................... 57
2.6.1 Screw Dislocations..........................................................................................58
2.6.2 Edge Dislocations............................................................................................58
2.6.3 Slip Systems..................................................................................................... 59
2.6.4 Dislocations in Diamond and Zinc Blende Crystals.................................. 61
2.6.4.1 Threading Dislocations in Diamond and Zinc Blende Crystals.............................................................................................63
2.6.4.2 Misfit Dislocations in Diamond and Zinc Blende Crystals.......64
2.6.5 Dislocations in Wurtzite Crystals................................................................. 67
2.6.5.1 Threading Dislocations in Wurtzite Crystals............................. 67
2.6.5.2 Misfit Dislocations in III-Nitrides................................................. 69
2.6.6 Dislocations in Hexagonal SiC...................................................................... 69
2.6.6.1 Threading Dislocations in Hexagonal SiC.................................. 70
2.6.7 Strain Fields and Line Energies of Dislocations......................................... 70
2.6.7.1 Energy of the Screw Dislocation................................................... 70
2.6.7.2 Energy of the Edge Dislocation.....................................................72
2.6.7.3 Energy of Mixed Dislocations.......................................................73
2.6.7.4 Frank''s Rule for Dislocation Energies.......................................... 74
2.6.7.5 Line Energies of Dislocations in Nitride Semiconductors........ 74
2.6.7.6 Hollow-Core Dislocations (Micropipes)......................................75
2.6.8 Forces on Dislocations.................................................................................... 76
2.6.9 Dislocation Motion.........................................................................................77
2.6.10 Electronic Properties of Dislocations...........................................................80
2.6.10.1 Diamond and Zinc Blende Semiconductors................................80
2.7 Planar Defects...............................................................................................................83
2.7.1 Stacking Faults................................................................................................83
2.7.2 Twins................................................................................................................85
2.7.3 Inversion Domain Boundaries......................................................................86
2.8 Electronic Properties of Semiconductors..................................................................88 References................................................................................................................................89
3. Heteroepitaxial Growth
..................................................................................................... 101
3.1 Introduction................................................................................................................ 101
3.2 Vapor Phase Epitaxy.................................................................................................. 102
3.2.1 Vapor Phase Epitaxial Mechanisms and Growth Rates.......................... 102
3.2.2 Hydrodynamic Considerations.................................................................. 104
3.2.3 Vapor Phase Epitaxial Reactors.................................................................. 106
3.2.4 Metalorganic Vapor Phase Epitaxy............................................................ 109
3.3 Molecular Beam Epitaxy........................................................................................... 112
3.4 Silicon, Germanium, and Si1â??xGex Alloys............................................................... 115
3.5 Silicon Carbide............................................................................................................ 117
3.6 III-Arsenides, III-Phosphides, and III-Antimonides............................................. 118
3.7 III-Nitrides................................................................................................................... 119
3.7.1 Vapor Phase Epitaxial Growth of III-Nitrides.......................................... 120
3.7.2 Molecular Beam Epitaxy of III-Nitrides....................................................122
3.8 II-VI Semiconductors................................................................................................. 123
3.8.1 ZnSe and Its Alloys....................................................................................... 124
3.8.2 HgCd
1. Introduction
..............................................................................................................................1 References..................................................................................................................................4
2. Properties of Semiconductors
...............................................................................................7
2.1 Introduction....................................................................................................................7
2.2 Crystallographic Properties.........................................................................................7
2.2.1 Diamond Structure......................................................................................... 12
2.2.2 Zinc Blende Structure..................................................................................... 12
2.2.3 Wurtzite Structure.......................................................................................... 13
2.2.4 Silicon Carbide................................................................................................ 14
2.2.5 Miller Indices in Cubic Crystals................................................................... 15
2.2.6 Miller-Bravais Indices in Hexagonal Crystals........................................... 16
2.2.7 Computations and the Metric Tensor.......................................................... 17
2.2.7.1 Coordinate Transformation........................................................... 18
2.2.7.2 The Metric Tensor...........................................................................20
2.2.7.3 Distances between Lattice Points and Lengths of Vectors........ 21
2.2.7.4 Angle between Vector Directions.................................................23
2.2.7.5 Volume of a Unit Cell...................................................................... 24
2.2.7.6 Reciprocal Basis Vectors and Reciprocal Metric Tensor............ 24
2.2.7.7 Distances and Angles Involving Planes......................................26
2.2.8 Orientation Effects..........................................................................................29
2.2.8.1 Diamond Semiconductors..............................................................29
2.2.8.2 Zinc Blende Semiconductors.........................................................29
2.2.8.3 Wurtzite Semiconductors...............................................................30
2.2.8.4 Hexagonal Silicon Carbide............................................................. 32
2.3 Lattice Constants and Thermal Expansion Coefficients........................................ 32
2.4 Elastic Properties.......................................................................................................... 37
2.4.1 Infinitesimal Strain Theory........................................................................... 37
2.4.2 Hooke''s Law.................................................................................................... 41
2.4.2.1 Hooke''s Law for Isotropic Materials............................................43
2.4.2.2 Hooke''s Law for Cubic Crystals....................................................43
2.4.2.3 Hooke''s Law for Hexagonal Crystals...........................................46
2.4.3 Elastic Moduli..................................................................................................46
2.4.3.1 Elastic Moduli for Cubic Crystals.................................................48
2.4.3.2 Elastic Moduli for Hexagonal Crystals........................................49
2.4.4 Biaxial Stresses and Tetragonal Distortion in Cubic Crystals..................50
2.4.5 Biaxial Stresses in Hexagonal Crystals........................................................ 52
2.4.6 Strain Energy in Cubic Crystals................................................................... 52
2.4.7 Strain Energy in Nitride Semiconductors...................................................53
2.5 Surface Free Energy.....................................................................................................53
2.6 Dislocations................................................................................................................... 57
2.6.1 Screw Dislocations..........................................................................................58
2.6.2 Edge Dislocations............................................................................................58
2.6.3 Slip Systems..................................................................................................... 59
2.6.4 Dislocations in Diamond and Zinc Blende Crystals.................................. 61
2.6.4.1 Threading Dislocations in Diamond and Zinc Blende Crystals.............................................................................................63
2.6.4.2 Misfit Dislocations in Diamond and Zinc Blende Crystals.......64
2.6.5 Dislocations in Wurtzite Crystals................................................................. 67
2.6.5.1 Threading Dislocations in Wurtzite Crystals............................. 67
2.6.5.2 Misfit Dislocations in III-Nitrides................................................. 69
2.6.6 Dislocations in Hexagonal SiC...................................................................... 69
2.6.6.1 Threading Dislocations in Hexagonal SiC.................................. 70
2.6.7 Strain Fields and Line Energies of Dislocations......................................... 70
2.6.7.1 Energy of the Screw Dislocation................................................... 70
2.6.7.2 Energy of the Edge Dislocation.....................................................72
2.6.7.3 Energy of Mixed Dislocations.......................................................73
2.6.7.4 Frank''s Rule for Dislocation Energies.......................................... 74
2.6.7.5 Line Energies of Dislocations in Nitride Semiconductors........ 74
2.6.7.6 Hollow-Core Dislocations (Micropipes)......................................75
2.6.8 Forces on Dislocations.................................................................................... 76
2.6.9 Dislocation Motion.........................................................................................77
2.6.10 Electronic Properties of Dislocations...........................................................80
2.6.10.1 Diamond and Zinc Blende Semiconductors................................80
2.7 Planar Defects...............................................................................................................83
2.7.1 Stacking Faults................................................................................................83
2.7.2 Twins................................................................................................................85
2.7.3 Inversion Domain Boundaries......................................................................86
2.8 Electronic Properties of Semiconductors..................................................................88 References................................................................................................................................89
3. Heteroepitaxial Growth
..................................................................................................... 101
3.1 Introduction................................................................................................................ 101
3.2 Vapor Phase Epitaxy.................................................................................................. 102
3.2.1 Vapor Phase Epitaxial Mechanisms and Growth Rates.......................... 102
3.2.2 Hydrodynamic Considerations.................................................................. 104
3.2.3 Vapor Phase Epitaxial Reactors.................................................................. 106
3.2.4 Metalorganic Vapor Phase Epitaxy............................................................ 109
3.3 Molecular Beam Epitaxy........................................................................................... 112
3.4 Silicon, Germanium, and Si1â??xGex Alloys............................................................... 115
3.5 Silicon Carbide............................................................................................................ 117
3.6 III-Arsenides, III-Phosphides, and III-Antimonides............................................. 118
3.7 III-Nitrides................................................................................................................... 119
3.7.1 Vapor Phase Epitaxial Growth of III-Nitrides.......................................... 120
3.7.2 Molecular Beam Epitaxy of III-Nitrides....................................................122
3.8 II-VI Semiconductors................................................................................................. 123
3.8.1 ZnSe and Its Alloys....................................................................................... 124
3.8.2 HgCd
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