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Viser: Mosfet Technologies for Double-Pole Four-Throw Radio-Frequency Switch
Mosfet Technologies for Double-Pole Four-Throw Radio-Frequency Switch
Viranjay M. Srivastava og Ghanshyam Singh
(2016)
Sprog: Engelsk
Springer International Publishing AG
969,00 kr.
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Detaljer om varen
- Paperback: 199 sider
- Udgiver: Springer International Publishing AG (August 2016)
- Forfattere: Viranjay M. Srivastava og Ghanshyam Singh
- ISBN: 9783319345352
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
Introduction.- Design of Double-Pole Four-Throw RF Switch.- Design of Double-Gate MOSFET.- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET.- Cylindrical Surrounding Double-Gate RF MOSFET.- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch.- Testing of MOSFET Surfaces Using Image Acquisition.- Conclusions and Future Scope.
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