Hjem

Contributor contact details Woodhead Publishing Series in Electronic and Optical Materials Dedication Preface
Part I: Materials and fabrication
1: Molecular beam epitaxy (MBE) growth of nitride semiconductors Abstract
1.1 Introduction
1.2 Molecular beam epitaxial (MBE) growth techniques
1.3 Plasma-assisted MBE (PAMBE) growth of nitride epilayers and quantum structures
1.4 Nitride nanocolumn (NC) materials
1.5 Nitride nanostructures based on NCs
1.6 Conclusion
2: Modern metal-organic chemical vapor deposition (MOCVD) reactors and growing nitride-based materials Abstract
2.1 Introduction
2.2 MOCVD systems
2.3 Planetary reactors
2.4 Close-coupled showerhead (CCS) reactors
2.5 In situ monitoring systems and growing nitride-based materials
2.6 Acknowledgements
3: Gallium nitride (GaN) on sapphire substrates for visible LEDs Abstract
3.1 Introduction
3.2 Sapphire substrates
3.3 Strained heteroepitaxial growth on sapphire substrates
3.4 Epitaxial overgrowth of GaN on sapphire substrates
3.5 GaN growth on non-polar and semi-polar surfaces
3.6 Future trends
4: Gallium nitride (GaN) on silicon substrates for LEDs Abstract
4.1 Introduction
4.2 An overview of gallium nitride (GaN) on silicon substrates
4.3 Silicon overview
4.4 Challenges for the growth of GaN on silicon substrates
4.5 Buffer-layer strategies
4.6 Device technologies
4.7 Conclusion
5: Phosphors for white LEDs Abstract
5.1 Introduction
5.2 Optical transitions of Ce3 + and Eu2 +
5.3 Chemical composition of representative nitride and oxynitride phosphors
5.4 Compounds activated by Eu2 +
5.5 Compounds activated by Ce3 +
5.6 Features of the crystal structure of nitride and oxynitride phosphors
5.7 Features of optical transitions of nitride and oxynitride phosphors
5.8 Conclusion and future trends
5.9 Acknowledgements
6: Fabrication of nitride LEDs Abstract
6.1 Introduction
6.2 GaN-based flip-chip LEDs and flip-chip technology
6.3 GaN FCLEDs with textured micro-pillar arrays
6.4 GaN FCLEDs with a geometric sapphire shaping structure
6.5 GaN thin-film photonic crystal (PC) LEDs
6.6 PC nano-structures and PC LEDs
6.7 Light emission characteristics of GaN PC TFLEDs
6.8 Conclusion
7: Nanostructured LEDs Abstract
7.1 Introduction
7.2 General mechanisms for growth of gallium nitride (GaN) related materials
7.3 General characterization method
7.4 Top-down technique for nanostructured LEDs
7.5 Bottom-up technique for GaN nanopillar substrates prepared by molecular beam epitaxy
7.6 Conclusion
8: Nonpolar and semipolar LEDs Abstract
8.1 Motivation: limitations of conventional c-plane LEDs
8.2 Introduction to selected nonpolar and semipolar planes
8.3 Challenges in nonpolar and semipolar epitaxial growth
8.4 Light extraction for nonpolar and semipolar LEDs
Part II: Performance of nitride LEDs
9: Efficiency droop in gallium indium nitride (GaInN)/gallium nitride (GaN) LEDs Abstract
9.1 Introduction
9.2 Recombination models in LEDs
9.3 Thermal roll-over in gallium indium nitride (GaInN) LEDs
9.4 Auger recombination
9.5 High-level injection and the asymmetry of carrier concentration and mobility
9.6 Non-capture of carriers
9.7 Polarization fields
9.8 Carrier delocalization
9.9 Discussion and comparison of droop mechanisms
9.10 Methods for overcoming droop
10: Photonic crystal nitride LEDs Abstract
10.1 Introduction
10.2 Photonic crystal (PC) technology
10.3 Improving LED extraction efficiency through PC surface patterning
10.4 PC-enhanced light extraction in P-side up LEDs
10.5 Modelling PC-LEDs
10.6 P-side up PC-LED performance
10.7 PC-enhanced light extraction in N-side up LEDs
10.8 Summary
10.9 Conclusions
11: Surface plasmon enhanced LEDs Abstract
11.1 Introduction
11.2 Mechanism for plasmon-coupled emission
11.3 Fabrication of plasmon-coupled nanostructures
11.4 Performance and outlook
11.5 Acknowledgements
12: Nitride LEDs based on quantum wells and quantum dots Abstract
12.1 Light-emitting diodes (LEDS)
12.2 Polarization effects in III-nitride LEDs
12.3 Current status of III-nitride LEDs
12.4 Modern LED designs and enhancements
13: Color tunable LEDs Abstract
13.1 Introduction
13.2 Initial idea for stacked LEDs
13.3 Second-generation LED stack with inclined sidewalls
13.4 Third-generation tightly integrated chip-stacking approach 13.5 Group-addressable pixelated micro-LED arrays
13.6 Conclusions
14: Reliability of nitride LEDs Abstract
14.1 Introduction
14.2 Reliability testing of nitride LEDs
14.3 Evaluation of LED degradation
14.4 Degradation mechanisms
14.5 Conclusion
15: Chip packaging: encapsulation of nitride LEDs Abstract
15.1 Functions of LED chip packaging
15.2 Basic structure of LED packaging modules
15.3 Processes used in LED packaging
15.4 Optical effects of gold wire bonding
15.5 Optical effects of phosphor coating
15.6 Optical effects of freeform lenses
15.7 Thermal design and processing of LED packaging
15.8 Conclusion
Part III: Applications of nitride LEDs
16: White LEDs for lighting applications: the role of standards Abstract
16.1 General lighting applications
16.2 LED terminology
16.3 Copying traditional lamps?
16.4 Freedom of choice
16.5 Current and future trends
17: Ultraviolet LEDs Abstract
17.1 Research background of deep ultraviolet (DUV) LEDs
17.2 Growth of low threading dislocation density (TDD) AlN layers on sapphire
17.3 Marked increases in internal quantum efficiency (IQE)
17.4 Aluminum gallium nitride (AlGaN)-based DUV-LEDs fabricated on high-quality aluminum nitride (AlN)
17.5 Increase in electron injection efficiency (EIE) and light extraction efficiency (LEE)
17.6 Conclusions and future trends
18: Infrared emitters made from III-nitride semiconductors Abstract
18.1 Introduction
18.2 High indium (In) content alloys for infrared emitters
18.3 Rare-earth (RE) doped gallium nitride (GaN) emitters
18.4 III-nitride materials for intersubband (ISB) optoelectronics
18.5 ISB devices
18.6 Conclusions
18.7 Acknowledgements
19: LEDs for liquid crystal display (LCD) backlighting Abstract
19.1 Introduction
19.2 Types of LED LCD backlighting units (BLUs)
19.3 Technical considerations for optical films and plates
19.4 Requirements for LCD BLUs
19.5 Advantages and history of LED BLUs
19.6 Market trends and technological developments
19.7 Optical design
20: LEDs in automotive lighting Abstract
20.1 Introduction
20.2 Forward lighting
20.3 Signal lighting
20.4 Human factor issues with LEDs
20.5 Energy and environmental issues
20.6 Future trends
20.7 Sources of further information and advice
20.8 Acknowledgments Index