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Viser: Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals
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COUPLED DIFFUSION IMPURITY ATOMS & POINT DEFECTS SILICON Vital Source e-bog
Oleg Velichko
(2019)
World Scientific Publishing
1.261,00 kr.
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Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals
Oleg Velichko
(2019)
Sprog: Engelsk
World Scientific Publishing UK Limited
2.147,00 kr.
Denne bog er endnu ikke udgivet. Den forventes Jul 2019.
Detaljer om varen
- Vital Source searchable e-book (Reflowable pages)
- Udgiver: World Scientific Publishing (November 2019)
- ISBN: 9781786347176
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
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Bookshelf online: 5 år fra købsdato.
Bookshelf appen: ubegrænset dage fra købsdato.
Udgiveren oplyser at følgende begrænsninger er gældende for dette produkt:
Print: 10 sider kan printes ad gangen
Copy: højest 10 sider i alt kan kopieres (copy/paste)
Bookshelf online: 5 år fra købsdato.
Bookshelf appen: ubegrænset dage fra købsdato.
Udgiveren oplyser at følgende begrænsninger er gældende for dette produkt:
Print: 10 sider kan printes ad gangen
Copy: højest 10 sider i alt kan kopieres (copy/paste)
Detaljer om varen
- Hardback: 370 sider
- Udgiver: World Scientific Publishing UK Limited (Juli 2019)
- ISBN: 9781786347152
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
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