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Viser: Charge and Spin Transport in Disordered Graphene-Based Materials
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Charge and Spin Transport in Disordered Graphene-Based Materials Vital Source e-bog
Dinh Van Tuan
(2015)
Springer Nature
897,00 kr.
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Charge and Spin Transport in Disordered Graphene-Based Materials
Van Tuan Dinh
(2015)
Sprog: Engelsk
Springer International Publishing AG
1.163,00 kr.
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Detaljer om varen
- Vital Source searchable e-book (Fixed pages)
- Udgiver: Springer Nature (Oktober 2015)
- ISBN: 9783319255712
This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.
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Bookshelf online: 5 år fra købsdato.
Bookshelf appen: ubegrænset dage fra købsdato.
Udgiveren oplyser at følgende begrænsninger er gældende for dette produkt:
Print: 2 sider kan printes ad gangen
Copy: højest 2 sider i alt kan kopieres (copy/paste)
Detaljer om varen
- Hardback: 200 sider
- Udgiver: Springer International Publishing AG (November 2015)
- ISBN: 9783319255699
This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.
Introduction.- Electronic and Transport Properties of Graphene.- The Real Space Order O(N) Transport Formalism.- Transport in Disordered Graphene.- Spin Transport in Disordered Graphene.- Conclusions.
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